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| NID5003N Preferred Device Self-Protected FET with Temperature and Current Limit 42 V, 20 A, Single N-Channel, DPAK HDPlust devices are an advanced series of power MOSFETs which utilize ON Semiconductors latest MOSFET technology process to achieve the lowest possible on-resistance per silicon area while incorporating smart features. Integrated thermal and current limits work together to provide short circuit protection. The devices feature an integrated Drain-to-Gate Clamp that enables them to withstand high energy in the avalanche mode. The Clamp also provides additional safety margin against unexpected voltage transients. Electrostatic Discharge (ESD) protection is provided by an integrated Gate-to-Source Clamp. Features http://onsemi.com VDSS (Clamped) 42 V ID MAX (Limited) 20 A* RDS(on) TYP 42 mW @ 10 V Drain Overvoltage Protection MPWR Gate Input RG * * * * * * Short Circuit Protection/Current Limit Thermal Shutdown with Automatic Restart IDSS Specified at Elevated Temperature Avalanche Energy Specified Slew Rate Control for Low Noise Switching Overvoltage Clamped Protection ESD Protection Temperature Limit Current Limit Current Sense Source MOSFET MAXIMUM RATINGS (TJ = 25C unless otherwise noted) Rating Drain-to-Source Voltage Internally Clamped Gate-to-Source Voltage Drain Current Total Power Dissipation @ TA = 25C (Note 1) @ TA = 25C (Note 2) Thermal Resistance Junction-to-Case Junction-to-Ambient (Note 1) Junction-to-Ambient (Note 2) Single Pulse Drain-to-Source Avalanche Energy (VDD = 25 Vdc, VGS = 5.0 Vdc, IL = 3.2 Apk, L = 120 mH, RG = 25 W) Operating and Storage Temperature Range (Note 3) Continuous Symbol VDSS VGS ID PD 1.3 2.3 C/W RqJC RqJA RqJA EAS 3.0 95 54 600 mJ Value 42 "14 Unit Vdc Vdc DPAK CASE 369C STYLE 2 D5003N A Y W = Device Code = Assembly Location = Year = Work Week 1 2 3 MARKING DIAGRAM AYW D5003N 1 = Gate 2 = Drain 3 = Source Internally Limited W ORDERING INFORMATION Device NID5003NT4 Package DPAK Shipping 2500/Tape & Reel TJ, Tstg -55 to 150 C Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. Surface mounted onto minimum pad size (0.412 square) FR4 PCB, 1 oz cu. 2. Mounted onto 1 square pad size (1.127 square) FR4 PCB, 1 oz cu. 3. Normal pre-fault operating range. See thermal limit range conditions. For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. Preferred devices are recommended choices for future use and best overall value. *Max current may be limited below this value depending on input conditions. (c) Semiconductor Components Industries, LLC, 2004 1 August, 2004 - Rev. 2 Publication Order Number: NID5003N/D NID5003N MOSFET ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Characteristic OFF CHARACTERISTICS Drain-to-Source Clamped Breakdown Voltage (VGS = 0 Vdc, ID = 250 mAdc) (VGS = 0 Vdc, ID = 250 mAdc, TJ = -40C to 150C) Zero Gate Voltage Drain Current (VDS = 32 Vdc, VGS = 0 Vdc) (VDS = 32 Vdc, VGS = 0 Vdc, TJ = 150C) Gate Input Current (VGS = 5.0 Vdc, VDS = 0 Vdc) ON CHARACTERISTICS Gate Threshold Voltage (VDS = VGS, ID = 1.2 mAdc) Threshold Temperature Coefficient Static Drain-to-Source On-Resistance (Note 4) (VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 25C) (VGS = 10 Vdc, ID = 3.0 Adc, TJ @ 150C) Static Drain-to-Source On-Resistance (Note 4) (VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 25C) (VGS = 5.0 Vdc, ID = 3.0 Adc, TJ @ 150C) Source-Drain Forward On Voltage (IS = 7.0 A, VGS = 0 V) SWITCHING CHARACTERISTICS Turn-on Time (Vin to 90% ID) Turn-off Time (Vin to 10% ID) Slew Rate On Slew Rate Off RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V RL = 4.7 W, Vin = 0 to 10 V, VDD = 12 V RL = 4.7 W, Vin = 10 to 0 V, VDD = 12 V T(on) T(off) -dVDS/dton dVDS/dtoff - - - - 16 80 1.4 0.5 20 100 - - V/ms V/ms ms VGS(th) 1.0 - RDS(on) - - RDS(on) - - VSD - 50 88 0.95 58 125 1.1 V 42 76 51 104 mW 1.7 5.0 2.2 - Vdc -mV/C mW V(BR)DSS 42 40 IDSS - - IGSSF - 0.6 2.5 50 5.0 - 125 mAdc 46 45 51 51 Vdc mAdc Symbol Min Typ Max Unit SELF PROTECTION CHARACTERISTICS (TJ = 25C unless otherwise noted) (Note 5) Current Limit Current Limit Temperature Limit (Turn-off) Thermal Hysteresis Temperature Limit (Turn-off) Thermal Hysteresis Input Current during Thermal Fault Input Current during Thermal Fault (VGS = 5.0 Vdc) VDS = 10 V (VGS = 5.0 Vdc, TJ = 150C) (VGS = 10 Vdc) VDS = 10 V (VGS = 10 Vdc, TJ = 150C) VGS = 5.0 Vdc VGS = 5.0 Vdc VGS = 10 Vdc VGS = 10 Vdc VDS = 35 V, (VGS = 5.0 V, Tj = 150C) VDS = 35 V, (VGS = 10 V, Tj = 150C) ILIM ILIM TLIM(off) DTLIM(on) TLIM(off) DTLIM(on) Ig(fault) Ig(fault) 12 7 18 13 150 - 150 - 0.6 2.0 18 13 22 18 175 15 165 15 - - 24 18 30 25 200 - 185 - - - C C C C mA mA Adc ESD ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted) Electro-Static Discharge Capability Human Body Model (HBM) Machine Model (MM) ESD 4000 400 - - - - V 4. Pulse Test: Pulse Width 300 ms, Duty Cycle 2%. 5. Fault conditions are viewed as beyond the normal operating range of the part. http://onsemi.com 2 NID5003N TYPICAL PERFORMANCE CURVES 35 ID, DRAIN CURRENT (AMPS) ID, DRAIN CURRENT (AMPS) 30 25 20 15 10 5 0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) 25 VDS 10 V 20 25C TJ = -55C 15 10 100C 5 0 1 1.5 3.5 3 2 2.5 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 4 Figure 1. On-Region Characteristics RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) RDS(on), DRAIN-TO-SOURCE RESISTANCE (W) 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 2 4 6 5 7 8 9 VGS, GATE-TO-SOURCE VOLTAGE (VOLTS) 3 10 ID = 5 A TJ = 25C 0.06 Figure 2. Transfer Characteristics TJ = 25C 0.055 0.05 0.045 VGS = 10 V 0.04 0.035 0.03 2 3 4 5 6 7 8 9 10 ID, DRAIN CURRENT (AMPS) VGS = 5 V Figure 3. On-Resistance vs. Gate-to-Source Voltage 1.8 RDS(on), DRAIN-TO-SOURCE RESISTANCE (NORMALIZED) 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 -50 -30 -10 10 10 30 50 70 90 110 130 150 ID = 5 A VGS = 10 V IDSS, LEAKAGE (nA) 10000 100000 Figure 4. On-Resistance vs. Drain Current and Gate Voltage VGS = 0 V TJ = 150C 1000 TJ = 100C 100 0 5 10 15 20 25 30 35 40 45 TJ, JUNCTION TEMPERATURE (C) VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS) Figure 5. On-Resistance Variation with Temperature Figure 6. Drain-to-Source Leakage Current vs. Voltage http://onsemi.com 3 NID5003N TYPICAL PERFORMANCE CURVES 10 IS, SOURCE CURRENT (AMPS) VGS = 0 V TJ = 25C 1 0.1 0.4 0.5 0.6 0.7 0.8 0.9 1 VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS) Figure 7. Diode Forward Voltage vs. Current http://onsemi.com 4 NID5003N PACKAGE DIMENSIONS DPAK CASE 369C-01 ISSUE O -T- B V R 4 SEATING PLANE DIM A B C D E F G H J K L R S U V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --- 0.035 0.050 0.155 --- MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --- 0.89 1.27 3.93 --- C E A S 1 2 3 Z U K F L D G 2 PL J H 0.13 (0.005) M T STYLE 2: PIN 1. GATE 2. DRAIN 3. SOURCE 4. DRAIN SOLDERING FOOTPRINT 6.20 0.244 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 3.0 0.118 SCALE 3:1 mm inches http://onsemi.com 5 NID5003N HDPlus is a trademark of Semiconductor Components Industries, LLC (SCILLC) ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 61312, Phoenix, Arizona 85082-1312 USA Phone: 480-829-7710 or 800-344-3860 Toll Free USA/Canada Fax: 480-829-7709 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2-9-1 Kamimeguro, Meguro-ku, Tokyo, Japan 153-0051 Phone: 81-3-5773-3850 ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. http://onsemi.com 6 NID5003N/D |
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